Investigate ferroelectric memcapacitors at cryogenic temperatures through nanofabrication and electrical characterization in Sherbrooke, Canada. Explore devices for semiconductor qubit control and scalable quantum electronics.

This full time PhD is based mainly at Université de Sherbrooke’s 3IT and Institut Quantique. The project focuses on HfZrO₂ devices, superconducting electrodes, deep-cryogenic measurements, and reliability. Research covers electrical engineering and materials engineering, with experimental work spanning device fabrication, characterization, and qubit-control applications.

Key Responsibilities:
Design cryogenic-compatible HfZrO₂ memcapacitors and crossbar arrays
Integrate TiN and NbN superconducting electrodes
Perform lithography, dry etching, and passivation processes




Characterize devices using AFM, SEM, and TEM
Measure hysteresis, retention, endurance, programmability, and noise

Requirements:
Master’s degree or equivalent in relevant engineering
Specialization in nanotechnology or materials science
Knowledge of nanofabrication and cryogenic measurements
Robust interest in cleanroom experimentation and interdisciplinary research
Fluency in French and English

Develop cryogenic memcapacitor expertise while assessing superconducting interconnects for semiconductor qubit control and scalable quantum processors.

📌 Cryogenic Ferroelectric Memcapacitor Phd Sherbrooke
🏢 Université de Sherbrooke
📍 Sherbrooke