Investigate ferroelectric memcapacitors at cryogenic temperatures through nanofabrication and electrical characterization in Sherbrooke, Canada. Explore devices for semiconductor qubit control and scalable quantum electronics.
This full-time PhD is based mainly at Université de Sherbrooke’s 3IT and Institut Quantique. The project focuses on HfZrO₂ devices, superconducting electrodes, deep-cryogenic measurements, and reliability. Research covers electrical engineering and materials engineering, with experimental work spanning device fabrication, characterization, and qubit-control applications.
Key Responsibilities:
- Design cryogenic-compatible HfZrO₂ memcapacitors and crossbar arrays
- Integrate TiN and NbN superconducting electrodes
- Perform lithography, dry etching, and passivation processes
- Characterize devices using AFM, SEM, and TEM
- Measure hysteresis, retention, endurance, programmability, and noise
Requirements:
- Master’s degree or equivalent in relevant engineering
- Specialization in nanotechnology or materials science
- Knowledge of nanofabrication and cryogenic measurements
- Robust interest in cleanroom experimentation and interdisciplinary research
- Fluency in French and English
Develop cryogenic memcapacitor expertise while assessing superconducting interconnects for semiconductor qubit control and scalable quantum processors.