Investigate ferroelectric memcapacitors at cryogenic temperatures through nanofabrication and electrical characterization in Sherbrooke, Canada. Explore devices for semiconductor qubit control and scalable quantum electronics.

This full-time PhD is based mainly at Université de Sherbrooke’s 3IT and Institut Quantique. The project focuses on HfZrO₂ devices, superconducting electrodes, deep-cryogenic measurements, and reliability. Research covers electrical engineering and materials engineering, with experimental work spanning device fabrication, characterization, and qubit-control applications.

Key Responsibilities:

- Design cryogenic-compatible HfZrO₂ memcapacitors and crossbar arrays
- Integrate TiN and NbN superconducting electrodes
- Perform lithography, dry etching, and passivation processes




- Characterize devices using AFM, SEM, and TEM
- Measure hysteresis, retention, endurance, programmability, and noise

Requirements:

- Master’s degree or equivalent in relevant engineering
- Specialization in nanotechnology or materials science
- Knowledge of nanofabrication and cryogenic measurements
- Robust interest in cleanroom experimentation and interdisciplinary research
- Fluency in French and English

Develop cryogenic memcapacitor expertise while assessing superconducting interconnects for semiconductor qubit control and scalable quantum processors.

📌 Cryogenic Ferroelectric Memcapacitor PhD (Sherbrooke)
🏢 Université de Sherbrooke
📍 Sherbrooke