- Define new pixel architecture, layout design and corresponding process integration schemes.
- Optimize existing pixel performance and manufacturability.
- Perform process, device and optoelectronic simulations of advanced CMOS/CCD imager pixels.
- Generate and evaluate pixel process and device experimental splits.
- Participate in internal and external silicon foundry interactions.
- Provide leadership and mentorship to junior designers.
Requirements - Excellent written and verbal communications skills.
- Strong knowledge of fabrication process, device physics and optoelectronics of advanced CMOS/CCD image sensors.
- Experience with image sensor pixel design, preferably with high-speed and low-noise CMOS/CCD pixel design experience.
- Knowledge and experience in analog circuits interfacing to imager pixels will be strong assets to the position.
- Doctorate (academic) with specialization in semiconductor device physics and with hands-on experience of semiconductor fabrication processes and device characterization techniques.
- At least 3 years of experience with 2D/3D TCAD simulations (process/device/optoelectronic simulations using Synopsys, Silvaco) and optical simulations (Ray tracing/FDTD using Lumerical, Zemax).
- Design of Experiments (DOEs)
including Taguchi methods, Response Surface Methodology (RSM).
Core Competencies
Expertise in pixel architecture design and optimization for advanced CMOS/CCD image sensors, with a solid foundation in semiconductor device physics and fabrication processes. Proven ability to lead and mentor teams while conducting complex simulations and experimental evaluations. Highest-signal resume keywords - Pixel Architecture Design